Infineon IPT015N10N5 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 9-Pin HSOF
- RS庫存編號:
- 170-2320
- 製造零件編號:
- IPT015N10N5ATMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 2000 件）*
TWD225,400.00
(不含稅)
TWD236,680.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年11月30日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 - 8000 | TWD112.70 | TWD225,400.00 |
| 10000 + | TWD109.30 | TWD218,600.00 |
* 參考價格
- RS庫存編號:
- 170-2320
- 製造零件編號:
- IPT015N10N5ATMA1
- 製造商:
- Infineon
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HSOF | |
| Series | IPT015N10N5 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 169nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.4mm | |
| Standards/Approvals | No | |
| Length | 10.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HSOF | ||
Series IPT015N10N5 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 169nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Height 2.4mm | ||
Standards/Approvals No | ||
Length 10.1mm | ||
Automotive Standard No | ||
Infineon IPT015N10N5 Series MOSFET, 100V Maximum Drain Source Voltage, 300A Maximum Continuous Drain Current - IPT015N10N5ATMA1
This MOSFET is a high-current N-channel switching device designed for power conversion and motor control in demanding electronic systems. It operates over a broad temperature span and is intended for surface-mounted assemblies where robust conduction and rapid switching are required. The component suits designers seeking a compact, high-power transistor for applications requiring significant drain currents and elevated voltage handling.
Features and Benefits:
• 100V drain voltage enables higher-voltage switching applications
• 300A continuous drain current supports heavy-current loads
• 2 mΩ Rds(on) minimises conduction losses under load
• 169 nC typical gate charge reduces switching energy trade-offs
• 375W maximum power dissipation allows high-power operation
• 20V gate tolerance permits flexible gate-drive voltages
• 300A continuous drain current supports heavy-current loads
• 2 mΩ Rds(on) minimises conduction losses under load
• 169 nC typical gate charge reduces switching energy trade-offs
• 375W maximum power dissipation allows high-power operation
• 20V gate tolerance permits flexible gate-drive voltages
Applications
• Suitable for high-current motor drive stages
• Ideal for synchronous rectification in power supplies
• Used with inverter modules for industrial drives
• Can be used for DC-DC converters in power systems
• Appropriate for traction or propulsion power electronics
• Ideal for synchronous rectification in power supplies
• Used with inverter modules for industrial drives
• Can be used for DC-DC converters in power systems
• Appropriate for traction or propulsion power electronics
What thermal range can I expect for harsh environments?
It is specified to function from -55 °C up to 175 °C, accommodating elevated junction conditions.
Which mounting method is required for PCB integration?
The device is intended for surface mounting in an HSOF package footprint for automated assembly.
How many pins are available for connection and layout planning?
The package provides nine pins, allowing for robust current paths and gate/drain/source arrangements.
What channel mode and type does it use for switching topology?
The device is an N-channel MOSFET operating in enhancement mode suitable for low-side or high-side arrangements with appropriate gate driving.
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