Infineon IPT015N10N5 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 9-Pin HSOF IPT015N10N5ATMA1

RS庫存編號:: 171-1991
製造零件編號:: IPT015N10N5ATMA1
製造商:: Infineon

Infineon IPT015N10N5 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 9-Pin HSOF IPT015N10N5ATMA1

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小計（1 包，共 5 件）*

TWD455.00

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TWD477.75

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單位	每單位	每包*
5 - 495	TWD91.00	TWD455.00
500 - 995	TWD88.80	TWD444.00
1000 +	TWD82.80	TWD414.00

* 參考價格

RS庫存編號:: 171-1991
製造零件編號:: IPT015N10N5ATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

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選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	300A
	Maximum Drain Source Voltage Vds	100V
	Package Type	HSOF
	Series	IPT015N10N5
	Mount Type	Surface
	Pin Count	9
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	169nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	375W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	175°C
	Length	10.1mm
	Width	10.58 mm
	Height	2.4mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 300A
	Maximum Drain Source Voltage Vds 100V
	Package Type HSOF
	Series IPT015N10N5
	Mount Type Surface
	Pin Count 9
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 169nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 375W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 175°C
	Length 10.1mm
	Width 10.58 mm
	Height 2.4mm
	Standards/Approvals No
	Automotive Standard No

Infineon MOSFET

The Infineon HSOF-8 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 1.5mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 300A. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. It has a maximum power dissipation of 375W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• 100% avalanche tested

• Excellent gate charge x RDS (on) product (FOM)

• Halogen free

• Highest system efficiency

• Ideal for high switching frequency

• Increased power density

• Lead (Pb) free plating

• Low voltage overshoot

• Operating temperature ranges between -55°C and 175°C

• Optimized for synchronous rectification

• Output capacitance reduction of up to 44%

• RDS (on) reduction of up to 44%

• Very low on resistance RDS (on)

Applications

• Adapter

• Light electric vehicles

• Low voltage drives

• Server power supplies

• Solar

• Telecommunication

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC61249-2-21

• JEDEC