Infineon IPT015N10N5 Type N-Channel MOSFET, 300 A, 100 V Enhancement, 9-Pin HSOF IPT015N10N5ATMA1
- RS庫存編號:
- 171-1991
- 製造零件編號:
- IPT015N10N5ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
TWD1,136.00
(不含稅)
TWD1,192.80
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 155 件從 2026年8月10日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 495 | TWD227.20 | TWD1,136.00 |
| 500 - 995 | TWD221.40 | TWD1,107.00 |
| 1000 + | TWD206.40 | TWD1,032.00 |
* 參考價格
- RS庫存編號:
- 171-1991
- 製造零件編號:
- IPT015N10N5ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 300A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HSOF | |
| Series | IPT015N10N5 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 169nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.1mm | |
| Standards/Approvals | No | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 300A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HSOF | ||
Series IPT015N10N5 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 169nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 175°C | ||
Length 10.1mm | ||
Standards/Approvals No | ||
Height 2.4mm | ||
Automotive Standard No | ||
Infineon IPT015N10N5 Series MOSFET, 100V Maximum Drain Source Voltage, 300A Maximum Continuous Drain Current - IPT015N10N5ATMA1
This MOSFET is a high-current N-channel switching device designed for power conversion and motor control in demanding electronic systems. It operates over a broad temperature span and is intended for surface-mounted assemblies where robust conduction and rapid switching are required. The component suits designers seeking a compact, high-power transistor for applications requiring significant drain currents and elevated voltage handling.
Features and Benefits:
• 100V drain voltage enables higher-voltage switching applications
• 300A continuous drain current supports heavy-current loads
• 2 mΩ Rds(on) minimises conduction losses under load
• 169 nC typical gate charge reduces switching energy trade-offs
• 375W maximum power dissipation allows high-power operation
• 20V gate tolerance permits flexible gate-drive voltages
• 300A continuous drain current supports heavy-current loads
• 2 mΩ Rds(on) minimises conduction losses under load
• 169 nC typical gate charge reduces switching energy trade-offs
• 375W maximum power dissipation allows high-power operation
• 20V gate tolerance permits flexible gate-drive voltages
Applications
• Suitable for high-current motor drive stages
• Ideal for synchronous rectification in power supplies
• Used with inverter modules for industrial drives
• Can be used for DC-DC converters in power systems
• Appropriate for traction or propulsion power electronics
• Ideal for synchronous rectification in power supplies
• Used with inverter modules for industrial drives
• Can be used for DC-DC converters in power systems
• Appropriate for traction or propulsion power electronics
What thermal range can I expect for harsh environments?
It is specified to function from -55 °C up to 175 °C, accommodating elevated junction conditions.
Which mounting method is required for PCB integration?
The device is intended for surface mounting in an HSOF package footprint for automated assembly.
How many pins are available for connection and layout planning?
The package provides nine pins, allowing for robust current paths and gate/drain/source arrangements.
What channel mode and type does it use for switching topology?
The device is an N-channel MOSFET operating in enhancement mode suitable for low-side or high-side arrangements with appropriate gate driving.
相關連結
- Infineon IPT015N10N5 Type N-Channel MOSFET 100 V Enhancement, 9-Pin HSOF
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 9-Pin HSOF
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 9-Pin HSOF IPT004N03LATMA1
- Infineon IAUT Type N-Channel MOSFET 80 V Enhancement, 8-Pin HSOF
- Infineon IPL Type N-Channel MOSFET 40 V Enhancement, 8-Pin HSOF
- Infineon IAUT Type N-Channel MOSFET 80 V Enhancement, 8-Pin HSOF IAUT300N08S5N012ATMA2
- Infineon IPL Type N-Channel MOSFET 40 V Enhancement, 8-Pin HSOF IPLU300N04S41R1XTMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V Enhancement, 8-Pin HSOF