Infineon OptiMOS 2 Type N-Channel MOSFET, 1.4 A, 20 V Enhancement, 3-Pin SC-70
- RS庫存編號:
- 166-0980
- 製造零件編號:
- BSS816NWH6327XTSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD7,500.00
(不含稅)
TWD7,860.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 30,000 件從 2026年8月10日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD2.50 | TWD7,500.00 |
| 15000 + | TWD2.50 | TWD7,500.00 |
* 參考價格
- RS庫存編號:
- 166-0980
- 製造零件編號:
- BSS816NWH6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-70 | |
| Series | OptiMOS 2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 240mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Length | 2mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-70 | ||
Series OptiMOS 2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 240mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Length 2mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
Infineon OptiMOS 2 Series MOSFET, 20V Maximum Drain Source Voltage, 1.4A Maximum Continuous Drain Current - BSS816NWH6327XTSA1
This MOSFET is a compact N‑channel enhancement device designed for low-voltage switching in automotive and industrial electronic systems. It operates across an extended temperature range and is intended for surface-mount applications where a small footprint and modest power handling are required.
Features and Benefits:
• Low on-resistance 240 mΩ reduces conduction losses and heat
• Maximum drain current 1.4A enables moderate load switching
• Drain-source voltage rating 20V supports typical automotive rails
• Gate charge 0.6 nC allows faster gate drive and reduced switching loss
• Power dissipation 500 mW permits sustained operation under light load
• Gate-source limit 8V protects against excessive drive voltages
• Maximum drain current 1.4A enables moderate load switching
• Drain-source voltage rating 20V supports typical automotive rails
• Gate charge 0.6 nC allows faster gate drive and reduced switching loss
• Power dissipation 500 mW permits sustained operation under light load
• Gate-source limit 8V protects against excessive drive voltages
Applications
• Suitable for switch stages in automotive sensor modules
• Ideal for load switching in 12V auxiliary circuits
• Used with battery-management peripherals requiring a small footprint
• Can be used for signal‑level power control in infotainment systems
• Applicable to compact motor‑drive gate stages for low currents
• Ideal for load switching in 12V auxiliary circuits
• Used with battery-management peripherals requiring a small footprint
• Can be used for signal‑level power control in infotainment systems
• Applicable to compact motor‑drive gate stages for low currents
What package suits high-density board layouts?
It is supplied in an SC-70 surface-mount package that minimises board area and supports automated placement.
How does it perform in elevated ambient temperatures?
The device is specified for operation from -40 °C up to 175 °C, allowing use in harsh thermal environments typical of under‑bonnet automotive locations.
What drive voltage range should be applied to the gate?
The maximum permissible gate‑to‑source voltage is 8V, so gate drivers should be selected to remain within this limit.
How does the device balance switching speed and gate drive energy?
With a typical gate charge of 0.6 nC it requires relatively low energy to switch, aiding efficiency in systems with repetitive transitions.
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