Infineon OptiMOS Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 3-Pin SC-70 BSS214NWH6327XTSA1
- RS庫存編號:
- 165-5863
- 製造零件編號:
- BSS214NWH6327XTSA1
- 製造商:
- Infineon
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查看批量定價選項小計（1 卷，共 3000 件）*
TWD8,100.00
(不含稅)
TWD8,520.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 3,000 件從 2026年8月10日 起發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD2.70 | TWD8,100.00 |
| 15000 + | TWD2.60 | TWD7,800.00 |
* 參考價格
- RS庫存編號:
- 165-5863
- 製造零件編號:
- BSS214NWH6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | OptiMOS | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 0.8nC | |
| Maximum Power Dissipation Pd | 500mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Standards/Approvals | No | |
| Length | 2mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series OptiMOS | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 0.8nC | ||
Maximum Power Dissipation Pd 500mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Standards/Approvals No | ||
Length 2mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS Series MOSFET, 20V Maximum Drain Source Voltage, 1.5A Maximum Continuous Drain Current - BSS214NWH6327XTSA1
This MOSFET is a compact N-channel enhancement device designed for surface-mount power switching and management in constrained electronic assemblies. It operates across a wide ambient span suited to demanding temperature conditions and is engineered for low-voltage, low-current applications where efficient conduction and rapid gate response are required.
Features and Benefits:
• 20V drain-source rating enables low-voltage power designs
• 250mΩ Rds(on) reduces conduction losses in switching paths
• 0.8nC typical gate charge supports fast gate transitions
• 1.5A continuous drain current handles modest load currents
• 500mW maximum dissipation allows safe thermal headroom
• 12V gate threshold maximises gate-drive flexibility
• 250mΩ Rds(on) reduces conduction losses in switching paths
• 0.8nC typical gate charge supports fast gate transitions
• 1.5A continuous drain current handles modest load currents
• 500mW maximum dissipation allows safe thermal headroom
• 12V gate threshold maximises gate-drive flexibility
Applications
• Suitable for automotive sensor power switching
• Ideal for battery management and load disconnects
• Used with control logic in distributed power modules
• Can be used for small DC-DC converter stages
• Suitable for portable device power-path switching
• Ideal for battery management and load disconnects
• Used with control logic in distributed power modules
• Can be used for small DC-DC converter stages
• Suitable for portable device power-path switching
What thermal range can it tolerate in extreme environments?
It is specified to function from -55°C up to 150°C, permitting use in high-temperature automotive zones.
How compact is it for high-density board layouts?
The component is supplied in a tiny SC-70 surface-mount package measuring 2mm by 1.25mm with a low profile of 0.8 mm.
What gate-drive limits should designers observe?
The gate-source voltage must not exceed 12V to avoid overstressing the gate dielectric.
How does the device behave under continuous load?
It supports a steady drain current of 1.5A while dissipating up to 500mW within its thermal constraints.
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