Infineon Isolated HEXFET 2 Type P, Type N-Channel MOSFET, 2.4 A, 20 V Enhancement, 8-Pin MSOP

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RS庫存編號:
166-0905
製造零件編號:
IRF7507TRPBF
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

2.4A

Maximum Drain Source Voltage Vds

20V

Package Type

MSOP

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.40Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

8.2nC

Maximum Gate Source Voltage Vgs

±12 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.25W

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Standards/Approvals

EIA-481, EIA-541, ANSI Y14.5M-1982

Length

3mm

Height

0.86mm

Width

3 mm

Number of Elements per Chip

2

Automotive Standard

No

Dual N/P-Channel Power MOSFET, Infineon


Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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