Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC
- RS庫存編號:
- 165-7249
- 製造零件編號:
- SI4178DY-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 2500 件）*
TWD25,500.00
(不含稅)
TWD26,775.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年11月02日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | TWD10.20 | TWD25,500.00 |
| 5000 + | TWD9.90 | TWD24,750.00 |
* 參考價格
- RS庫存編號:
- 165-7249
- 製造零件編號:
- SI4178DY-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si4178DY | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.85V | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4mm | |
| Standards/Approvals | RoHS | |
| Length | 5mm | |
| Height | 1.55mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si4178DY | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.85V | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Gate Source Voltage Vgs 25V | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4mm | ||
Standards/Approvals RoHS | ||
Length 5mm | ||
Height 1.55mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Si4178DY Series MOSFET, 30V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - SI4178DY-T1-GE3
This is a surface-mount N-channel MOSFET intended for power switching and high-current applications within electronic systems. It operates as an enhancement-mode transistor and is supplied in an SOIC-8 package for PCB mounting. The device supports moderate voltage switching and is suitable for designs requiring Compact power transistors with controlled gate-charge characteristics.
Features and Benefits:
• 30V maximum drain voltage enabling low-voltage power switching • 12A continuous drain current for handling high load currents • 33mΩ drain-source resistance for reduced conduction losses • 7.5nC typical gate charge for Faster switching transitions • 5W power dissipation capacity for sustained thermal performance • -55°C to 150°C operating range for wide thermal tolerance
Applications
• Suitable for DC power distribution switches in automation panels • Ideal for motor driver low-side switching in industrial drives • Used for load switching in power-management circuits for control systems • Can be used for synchronous rectification in Compact power converters • Suitable for battery protection and power-path control in machinery
What gate-voltage limits should be observed during design?
The gate-source voltage must not exceed ±25V to prevent gate-oxide stress and ensure reliable switching.
How should thermal management be approached on the PCB?
Given a 5W dissipation rating, provide adequate copper area and thermal vias to lower junction temperature during continuous high-current operation.
What pin-count and package considerations affect layout?
The device arrives in an 8-pin SOIC package, so track widths and pad spacing should accommodate surface-mount assembly and thermal conduction.
What electrical characteristic governs switching speed in Pulse applications?
The typical gate charge of 7.5nC is the key parameter influencing drive requirements and switching transition times when selecting gate drivers.
相關連結
- Vishay Si4178DY Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3
- Vishay Si4848DY Type N-Channel MOSFET 150 V Enhancement, 8-Pin SOIC
- Vishay Si4134DY Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay Si4162DY Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SOIC
- Vishay ThunderFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin SOIC
- Vishay Si4850EY Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC