Vishay Si4178DY Type N-Channel MOSFET, 12 A, 30 V Enhancement, 8-Pin SOIC SI4178DY-T1-GE3
- RS庫存編號:
- 165-7249
- 製造零件編號:
- SI4178DY-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 2500 件）*
TWD25,500.00
(不含稅)
TWD26,775.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年1月05日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | TWD10.20 | TWD25,500.00 |
| 5000 + | TWD9.90 | TWD24,750.00 |
* 參考價格
- RS庫存編號:
- 165-7249
- 製造零件編號:
- SI4178DY-T1-GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | Si4178DY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Forward Voltage Vf | 0.85V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.55mm | |
| Width | 4mm | |
| Length | 5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series Si4178DY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Gate Source Voltage Vgs 25V | ||
Forward Voltage Vf 0.85V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.55mm | ||
Width 4mm | ||
Length 5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay Si4178DY Series MOSFET, 30V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - SI4178DY-T1-GE3
This MOSFET is a surface-mount N-channel enhancement device designed for power switching and management in compact electronic systems. It offers moderate voltage handling and high continuous current capability, suited to applications where efficient high-current switching and thermal endurance are required. The component complies with RoHS and is intended for board-level mounting in industry and commercial designs.
Features and Benefits:
• 30V drain rating enables medium-voltage switching applications
• 12A continuous current supports high-current load control
• 33mΩ Rds(on) reduces conduction losses in power paths
• 7.5nC typical gate charge allows fast gate transitions
• 5W power dissipation helps manage thermal load in small packages
• 12A continuous current supports high-current load control
• 33mΩ Rds(on) reduces conduction losses in power paths
• 7.5nC typical gate charge allows fast gate transitions
• 5W power dissipation helps manage thermal load in small packages
Applications
• Suitable for DC-DC converter output stages
• Ideal for battery management and power distribution
• Used with motor drivers for compact actuators
• Can be used for load switching in telecom equipment
• Ideal for battery management and power distribution
• Used with motor drivers for compact actuators
• Can be used for load switching in telecom equipment
What gate voltage limitations must designers observe?
The device accepts up to 25V between gate and source, so gate drivers must remain within this limit to avoid gate-oxide stress.
How does thermal performance influence PCB layout decisions?
With a 5W dissipation rating, designers should provide adequate copper area and thermal vias beneath the SOIC footprint to improve heat-spreading and maintain junction temperature within limits.
What ambient temperature range can it operate within?
It functions reliably from -55°C to 150°C, which informs selection for applications exposed to wide thermal extremes.
What package and mounting considerations affect assembly?
The part is supplied in an SOIC-8 surface-mount package with an overall profile height of 1.55mm, so stencil design and solder-paste volume must be tuned for consistent solder joints.
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