製造零件編號

Vishay Si4162DY Type N-Channel MOSFET, 13.6 A, 30 V Enhancement, 8-Pin SOIC

RS庫存編號:: 165-2750
製造零件編號:: SI4162DY-T1-GE3
製造商:: Vishay

Vishay Si4162DY Type N-Channel MOSFET, 13.6 A, 30 V Enhancement, 8-Pin SOIC

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 2500 件）*

TWD31,750.00

(不含稅)

TWD33,350.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年9月09日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
2500 - 2500	TWD12.70	TWD31,750.00
5000 +	TWD12.30	TWD30,750.00

* 參考價格

RS庫存編號:: 165-2750
製造零件編號:: SI4162DY-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	13.6A
	Maximum Drain Source Voltage Vds	30V
	Series	Si4162DY
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	8mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	20nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2.5W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	5mm
	Height	1.5mm
	Width	4 mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 13.6A
	Maximum Drain Source Voltage Vds 30V
	Series Si4162DY
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 8mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 20nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2.5W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 5mm
	Height 1.5mm
	Width 4 mm
	Automotive Standard No

COO (Country of Origin):: CN

Vishay Si4162DY Type N-Channel MOSFET, 13.6 A, 30 V Enhancement, 8-Pin SOIC

訂單超過 $1,300.00 免費送貨

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