Wolfspeed Series Type N-Channel MOSFET, 193 A, 1.2 kV Enhancement, 7-Pin CAS120M12BM2
- RS庫存編號:
- 162-9720
- 製造零件編號:
- CAS120M12BM2
- 製造商:
- Wolfspeed
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 盒,共 10 件)*
TWD203,268.00
(不含稅)
TWD213,431.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 10 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每盒* |
|---|---|---|
| 10 - 40 | TWD20,326.80 | TWD203,268.00 |
| 50 + | TWD19,310.50 | TWD193,105.00 |
* 參考價格
- RS庫存編號:
- 162-9720
- 製造零件編號:
- CAS120M12BM2
- 製造商:
- Wolfspeed
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Wolfspeed | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 193A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 378nC | |
| Maximum Power Dissipation Pd | 925W | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 2.4V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Series | |
| Width | 61.4 mm | |
| Height | 30mm | |
| Length | 106.4mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Wolfspeed | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 193A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 378nC | ||
Maximum Power Dissipation Pd 925W | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 2.4V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Series | ||
Width 61.4 mm | ||
Height 30mm | ||
Length 106.4mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements
MOSFET Transistors, Wolfspeed
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