Wolfspeed Type N-Channel MOSFET, 10.7 A, 1200 V Enhancement
- RS庫存編號:
- 248-8940
- 製造零件編號:
- CAB011M12FM3
- 製造商:
- Wolfspeed
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 管,共 18 件)*
TWD105,721.20
(不含稅)
TWD111,007.26
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 36 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 18 - 18 | TWD5,873.40 | TWD105,721.20 |
| 36 + | TWD5,755.90 | TWD103,606.20 |
* 參考價格
- RS庫存編號:
- 248-8940
- 製造零件編號:
- CAB011M12FM3
- 製造商:
- Wolfspeed
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Wolfspeed | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Mount Type | Chassis | |
| Maximum Drain Source Resistance Rds | 21mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Maximum Power Dissipation Pd | 469W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Wolfspeed | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Mount Type Chassis | ||
Maximum Drain Source Resistance Rds 21mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Maximum Power Dissipation Pd 469W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Wolfspeed 1200 V, 11 mΩ All-Silicon Carbide Half-Bridge Module. The Wolfspeed WolfPACK™ SiC-Based Power Modules are simple and designed to provide clean, reliable power for energy conversion systems. These modules offer incredibly low losses in a package that lends itself extremely well to automation and manufacturing at scale. These Wolfspeed WolfPACK modules come in SiC MOSFET half-bridge and SiC MOSFET six-pack configurations with a variety of mΩ options. The devices feature a compact footprint and can be used to design a streamlined, higher power density system. They can help system designers enable a more compact solution than achievable with either multiple discrete devices or with larger, high-ampacity modules.
Ultra-Low Loss
High Frequency Operation
Zero Turn-Off Tail Current from MOSFET
Normally-Off, Fail-Safe Device Operation
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