Wolfspeed C3M Type N-Channel MOSFET, 22 A, 1 kV Enhancement, 8-Pin TO-263
- RS庫存編號:
- 150-3947
- 製造零件編號:
- C3M0120100J
- 製造商:
- Wolfspeed
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD17,035.00
(不含稅)
TWD17,887.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 650 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD340.70 | TWD17,035.00 |
| 100 - 150 | TWD333.90 | TWD16,695.00 |
| 200 + | TWD327.20 | TWD16,360.00 |
* 參考價格
- RS庫存編號:
- 150-3947
- 製造零件編號:
- C3M0120100J
- 製造商:
- Wolfspeed
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Wolfspeed | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Series | C3M | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 21.5nC | |
| Maximum Gate Source Voltage Vgs | 9 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.8V | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.12 mm | |
| Height | 4.32mm | |
| Length | 10.23mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Wolfspeed | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Series C3M | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 21.5nC | ||
Maximum Gate Source Voltage Vgs 9 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.8V | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Operating Temperature 150°C | ||
Width 9.12 mm | ||
Height 4.32mm | ||
Length 10.23mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices. Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device addresses many power design challenges by providing a unique device with low on-Resistance, very low output capacitance and low source inductance for a perfect blend of low switching losses and low conduction losses.
Minimum of 1kV Vbr across entire operating temperature range
low source inductance package with separate driver source pin
High-speed switching with low output capacitance
High blocking voltage with low RDS(on)
Fast intrinsic diode with low reverse recovery (Qrr)
Easy to parallel and simple to drive
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