N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXYS IXFK120N30P3

RS庫存編號:: 146-1745
製造零件編號:: IXFK120N30P3
製造商:: IXYS

N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXYS IXFK120N30P3

此圖片僅供參考，請參閲產品詳細資訊及規格

24 現貨庫存，可於6工作日發貨。

單價（不含稅）毎管：25 個

TWD497.30

(不含稅)

TWD522.16

單位	每單位	Per Tube*
25 - 25	TWD497.30	TWD12,432.50
50 - 75	TWD486.50	TWD12,162.50
100 +	TWD475.60	TWD11,890.00

* 參考價格

RS庫存編號:: 146-1745
製造零件編號:: IXFK120N30P3
製造商:: IXYS

IXFK120N30P3, IXFX120N30P3, Polar3 HiPerFET, Power MOSFETs, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Diode
ESD Control Selection Guide V1

屬性	值
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	300 V
Series	HiperFET, Polar3
Package Type	TO-264
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	27 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.13 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Width	5.13mm
Transistor Material	Si
Length	19.96mm
Typical Gate Charge @ Vgs	150 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	26.16mm

N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXYS IXFK120N30P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series