IXYS Type N-Channel MOSFET, 64 A, 600 V Enhancement, 3-Pin TO-264
- RS庫存編號:
- 168-4735
- 製造零件編號:
- IXFK64N60P3
- 製造商:
- IXYS
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 25 件）*
TWD9,552.50
(不含稅)
TWD10,030.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 50 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 25 - 100 | TWD382.10 | TWD9,552.50 |
| 125 + | TWD374.50 | TWD9,362.50 |
* 參考價格
- RS庫存編號:
- 168-4735
- 製造零件編號:
- IXFK64N60P3
- 製造商:
- IXYS
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.13kW | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 19.96mm | |
| Height | 26.16mm | |
| Width | 5.13 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.13kW | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Length 19.96mm | ||
Height 26.16mm | ||
Width 5.13 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
相關連結
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-264 IXFK64N60P3
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-264 IXFK64N50Q3
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-264 IXFK48N60Q3
- IXYS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-264