N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

RS庫存編號:: 802-4357
製造零件編號:: IXFB210N30P3
製造商:: IXYS

N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

25 現貨庫存，可於6工作日發貨。

單價（不含稅）個

TWD983.00

(不含稅)

TWD1,032.15

單位	每單位
1 - 6	TWD983.00
7 +	TWD959.00

RS庫存編號:: 802-4357
製造零件編號:: IXFB210N30P3
製造商:: IXYS

IXFB210N30P3, Polar3 HiPerFET, Power MOSFETs, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

屬性	值
Channel Type	N
Maximum Continuous Drain Current	210 A
Maximum Drain Source Voltage	300 V
Package Type	PLUS264
Series	HiperFET, Polar3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	14.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.89 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Width	5.31mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Length	20.29mm
Typical Gate Charge @ Vgs	268 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	26.59mm

N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series