Infineon OptiMOS 2 Type N-Channel MOSFET, 2.5 A, 20 V Enhancement, 3-Pin SOT-23
- RS庫存編號:
- 145-9547
- 製造零件編號:
- BSS205NH6327XTSA1
- 製造商:
- Infineon
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可享批量折扣
小計(1 卷,共 3000 件)*
TWD7,500.00
(不含稅)
TWD7,860.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,000 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD2.50 | TWD7,500.00 |
| 15000 + | TWD2.10 | TWD6,300.00 |
* 參考價格
- RS庫存編號:
- 145-9547
- 製造零件編號:
- BSS205NH6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | OptiMOS 2 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 85mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 2.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.1 mm | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Height | 1.3mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series OptiMOS 2 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 85mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 2.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 0.1 mm | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Height 1.3mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS™ 2 Series MOSFET, 2.5A Maximum Continuous Drain Current, 500 mW Maximum Power Dissipation - BSS205NH6327XTSA1
This N-channel MOSFET is a VITAL component in contemporary electronic applications, especially in automation and automotive sectors. Designed for efficient switching applications, it features a Compact SOT-23 surface mount package. Its capacity to handle significant drain currents and voltages makes it suitable for industrial and automotive contexts, ensuring consistent performance.
Features & Benefits
• Maximum continuous drain current of 2.5A
• Maximum drain-source voltage of 20V
• Minimal Rds(on) of 85 mΩ enhances power efficiency
• Qualified to AEC-Q101 for automotive applications
Applications
• Used in automotive power management systems
• Suitable for DC-DC converters in electronic devices
• Employed in motor control for efficient switching
• Ideal for power amplification in RF
What kind of protection does this offer against voltage spikes?
It is avalanche rated and can handle high energy pulses, providing protection in dynamic environments.
What is the significance of the low Rds(on) in this device?
A low on-state resistance improves power loss management and enhances efficiency, making it suitable for high-efficiency applications.
How can this be installed on a circuit board?
It can be soldered onto a PCB in the SOT-23 package, ensuring secure mounting for surface-mount technology applications.
What are the typical switching characteristics at the rated voltage?
The device displays quick turn-on and turn-off times, improving switching efficiency in high-speed applications.
Is this compatible with other components in automotive circuits?
Yes, it meets automotive standards and functions effectively with various devices in power management circuits.
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