Vishay SiR632DP Type N-Channel MOSFET, 29 A, 150 V Enhancement, 8-Pin SO-8 SIR632DP-T1-RE3
- RS庫存編號:
- 134-9723
- 製造零件編號:
- SIR632DP-T1-RE3
- 製造商:
- Vishay
可享批量折扣
小計（1 包，共 5 件）*
TWD149.00
(不含稅)
TWD156.45
(含稅)
添加 45 件 件可免費送貨
有庫存
- 加上 285 件從 2026年2月23日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 745 | TWD29.80 | TWD149.00 |
| 750 - 1495 | TWD28.80 | TWD144.00 |
| 1500 + | TWD28.60 | TWD143.00 |
* 參考價格
- RS庫存編號:
- 134-9723
- 製造零件編號:
- SIR632DP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SO-8 | |
| Series | SiR632DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 69.5W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.25mm | |
| Standards/Approvals | No | |
| Width | 5.26 mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SO-8 | ||
Series SiR632DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 69.5W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 6.25mm | ||
Standards/Approvals No | ||
Width 5.26 mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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