Vishay SiR632DP Type N-Channel MOSFET, 29 A, 150 V Enhancement, 8-Pin SO-8
- RS庫存編號:
- 134-9159
- 製造零件編號:
- SIR632DP-T1-RE3
- 製造商:
- Vishay
可享批量折扣
小計（1 卷，共 3000 件）*
TWD65,100.00
(不含稅)
TWD68,340.00
(含稅)
添加 3000 件 件可免費送貨
暫時缺貨
- 從 2026年11月02日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD21.70 | TWD65,100.00 |
| 15000 + | TWD21.00 | TWD63,000.00 |
* 參考價格
- RS庫存編號:
- 134-9159
- 製造零件編號:
- SIR632DP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | SiR632DP | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 69.5W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.25mm | |
| Standards/Approvals | No | |
| Width | 5.26 mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series SiR632DP | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 69.5W | ||
Maximum Operating Temperature 150°C | ||
Length 6.25mm | ||
Standards/Approvals No | ||
Width 5.26 mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
相關連結
- Vishay SiR632DP Type N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8 SIR632DP-T1-RE3
- Vishay TrenchFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8
- Vishay TrenchFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8 SiR570DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5708DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5710DP-T1-RE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay Type N-Channel MOSFET 20 V Enhancement, 8-Pin SO-8
- Vishay N-Channel 150 V Type N-Channel MOSFET 150 V, 8-Pin SO-8