製造零件編號

Vishay TrenchFET Type N-Channel MOSFET, 77.4 A, 150 V Enhancement, 8-Pin SO-8 SiR570DP-T1-RE3

RS庫存編號:: 228-2906
製造零件編號:: SiR570DP-T1-RE3
製造商:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 77.4 A, 150 V Enhancement, 8-Pin SO-8 SiR570DP-T1-RE3

可享批量折扣

小計（1 包，共 5 件）*

TWD345.00

(不含稅)

TWD362.25

訂單超過 $1,300.00 免費送貨

有庫存

加上 5,975 件從 2026年2月23日起發貨

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單位	每單位	每包*
5 - 45	TWD69.00	TWD345.00
50 - 95	TWD67.20	TWD336.00
100 - 245	TWD65.40	TWD327.00
250 - 995	TWD63.80	TWD319.00
1000 +	TWD62.40	TWD312.00

* 參考價格

RS庫存編號:: 228-2906
製造零件編號:: SiR570DP-T1-RE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	77.4A
	Maximum Drain Source Voltage Vds	150V
	Package Type	SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	7.9mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	46.9nC
	Maximum Power Dissipation Pd	104W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 77.4A
	Maximum Drain Source Voltage Vds 150V
	Package Type SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 7.9mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 46.9nC
	Maximum Power Dissipation Pd 104W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - SiR570DP-T1-RE3

The Vishay TrenchFET N-channel is 150 V MOSFET.

100 % Rg and UIS tested

Vishay TrenchFET Type N-Channel MOSFET, 77.4 A, 150 V Enhancement, 8-Pin SO-8 SiR570DP-T1-RE3

訂單超過 $1,300.00 免費送貨

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