Vishay TrenchFET Type N-Channel MOSFET, 70.6 A, 80 V Enhancement, 8-Pin SO-8 SiR880BDP-T1-RE3
- RS庫存編號:
- 228-2914
- 製造零件編號:
- SiR880BDP-T1-RE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD375.00
(不含稅)
TWD393.80
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 2,560 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD37.50 | TWD375.00 |
| 50 - 90 | TWD36.50 | TWD365.00 |
| 100 - 240 | TWD35.60 | TWD356.00 |
| 250 - 990 | TWD34.80 | TWD348.00 |
| 1000 + | TWD34.00 | TWD340.00 |
* 參考價格
- RS庫存編號:
- 228-2914
- 製造零件編號:
- SiR880BDP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 70.6A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SO-8 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 71.4W | |
| Typical Gate Charge Qg @ Vgs | 43.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 70.6A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SO-8 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 71.4W | ||
Typical Gate Charge Qg @ Vgs 43.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET N-channel is 80 V MOSFET.
100 % Rg and UIS tested
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