製造零件編號

Vishay TrenchFET Type N-Channel MOSFET, 70.6 A, 80 V Enhancement, 8-Pin SO-8 SiR880BDP-T1-RE3

RS庫存編號:: 228-2914
製造零件編號:: SiR880BDP-T1-RE3
製造商:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 70.6 A, 80 V Enhancement, 8-Pin SO-8 SiR880BDP-T1-RE3

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 10 件）*

TWD351.00

(不含稅)

TWD368.60

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 5,560 個，準備發貨

單位	每單位	每包*
10 - 40	TWD35.10	TWD351.00
50 - 90	TWD34.20	TWD342.00
100 - 240	TWD33.30	TWD333.00
250 - 990	TWD32.60	TWD326.00
1000 +	TWD31.80	TWD318.00

* 參考價格

RS庫存編號:: 228-2914
製造零件編號:: SiR880BDP-T1-RE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	70.6A
	Maximum Drain Source Voltage Vds	80V
	Series	TrenchFET
	Package Type	SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	6.5mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	43.5nC
	Maximum Power Dissipation Pd	71.4W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 70.6A
	Maximum Drain Source Voltage Vds 80V
	Series TrenchFET
	Package Type SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 6.5mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 43.5nC
	Maximum Power Dissipation Pd 71.4W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - SiR880BDP-T1-RE3

The Vishay TrenchFET N-channel is 80 V MOSFET.

100 % Rg and UIS tested

Vishay TrenchFET Type N-Channel MOSFET, 70.6 A, 80 V Enhancement, 8-Pin SO-8 SiR880BDP-T1-RE3

訂單超過 $1,300.00 免費送貨

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