Vishay Type N-Channel MOSFET, 430 A, 20 V Enhancement, 8-Pin SO-8
- RS庫存編號:
- 210-4998
- 製造零件編號:
- SIR178DP-T1-RE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD87,600.00
(不含稅)
TWD91,980.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月16日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD29.20 | TWD87,600.00 |
| 15000 + | TWD28.60 | TWD85,800.00 |
* 參考價格
- RS庫存編號:
- 210-4998
- 製造零件編號:
- SIR178DP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 430A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.31mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 204nC | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 104W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.26 mm | |
| Length | 6.25mm | |
| Height | 1.12mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 430A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.31mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 204nC | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 104W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 5.26 mm | ||
Length 6.25mm | ||
Height 1.12mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay N-Channel 20 V (D-S) MOSFET has PowerPAK SO-8 package type with 430 A drain current.
TrenchFET Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Leadership RDS(ON) minimizes power loss from conduction
2.5 V ratings and operation at low voltage gate drive
100 % Rg and UIS tested
相關連結
- Vishay Type N-Channel MOSFET 20 V Enhancement, 8-Pin SO-8 SIR178DP-T1-RE3
- Vishay SiDR392DP Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
- Vishay SiDR680ADP Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8
- Vishay SiR882BDP Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay SiR826LDP Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8
- Vishay SiR680LDP Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8
- Vishay SiR180ADP Type N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8
- Vishay SiR870BDP Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8