Vishay S N-Channel MOSFET, 28 A, 650 V N, 8-Pin PowerPAK 10 x 12 SIHK135N65S-T1-GE3
- RS庫存編號:
- 878-898
- 製造零件編號:
- SIHK135N65S-T1-GE3
- 製造商:
- Vishay
N
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TWD83.00
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TWD87.15
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- 從 2027年2月17日 發貨
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膠帶 | 每膠帶 |
|---|---|
| 1 - 9 | TWD83.00 |
| 10 - 24 | TWD54.00 |
| 25 - 99 | TWD32.00 |
| 100 + | TWD31.00 |
* 參考價格
- RS庫存編號:
- 878-898
- 製造零件編號:
- SIHK135N65S-T1-GE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | S | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.121Ω | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Power Dissipation Pd | 278W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series S | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.121Ω | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Power Dissipation Pd 278W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay Power MOSFET designed to manage switching and conduction efficiently, making it an essential component for various power supply applications.
Latest generation SF series technology, ensuring optimal performance
Low figure of merit (FOM) for enhanced energy efficiency
Avalanche energy rated, offering improved reliability under stress
Single Pulse avalanche energy capacity, catering to demanding applications
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