Vishay SiH N channel-Channel MOSFET, 34 A, 650 V Enhancement, 4-Pin PowerPAK SO-8 SiHH068N60E

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TWD278.00

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TWD291.90

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RS庫存編號:
735-156
製造零件編號:
SiHH068N60E
製造商:
Vishay
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品牌

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK SO-8

Series

SiH

Mount Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance Rds

0.059Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

10V

Forward Voltage Vf

600V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

53nC

Maximum Power Dissipation Pd

202W

Maximum Operating Temperature

150°C

Height

1mm

Standards/Approvals

RoHS

Length

8mm

Width

8mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

94A continuous drain current at TA=25°C

54.3nC typical total gate charge for fast switching

-55°C to +175°C extended junction temperature range

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