Vishay SQ P-Channel MOSFET, -48 A, -80 V P, 3-Pin TO-252 SQD50P08-28_NE3
- RS庫存編號:
- 878-894
- 製造零件編號:
- SQD50P08-28_NE3
- 製造商:
- Vishay
N
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* 參考價格
- RS庫存編號:
- 878-894
- 製造零件編號:
- SQD50P08-28_NE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | P-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -48A | |
| Maximum Drain Source Voltage Vds | -80V | |
| Package Type | TO-252 | |
| Series | SQ | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.028Ω | |
| Channel Mode | P | |
| Typical Gate Charge Qg @ Vgs | 95nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 136W | |
| Forward Voltage Vf | -1.5V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 6.73mm | |
| Height | 2.38mm | |
| Length | 6.22mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type P-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -48A | ||
Maximum Drain Source Voltage Vds -80V | ||
Package Type TO-252 | ||
Series SQ | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.028Ω | ||
Channel Mode P | ||
Typical Gate Charge Qg @ Vgs 95nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 136W | ||
Forward Voltage Vf -1.5V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 6.73mm | ||
Height 2.38mm | ||
Length 6.22mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- GB
The Vishay P-Channel MOSFET delivers exceptional performance with a maximum drain-source voltage of 80 V and a temperature rating of 175 °C. This component designed to enhance efficiency in automotive applications.
Halogen-free according to IEC 61249-2-21
AEC-Q101 Qualified for automotive reliability
Maximum continuous drain current of 48 A, peaking at 190 A
Optimised RDS(on) of 0.028 Ohm at VGS = -10 V
Compliant with RoHS Directive 2002/95/EC
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