Vishay SQ P-Channel MOSFET, -1.7 A, -60 V P, 3-Pin SOT-23 SQ2309CES-T1_NE3
- RS庫存編號:
- 878-890
- 製造零件編號:
- SQ2309CES-T1_NE3
- 製造商:
- Vishay
N
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訂單超過 $1,300.00 免費送貨
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- 從 2027年2月16日 發貨
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|---|---|
| 1 - 24 | TWD12.00 |
| 25 - 99 | TWD8.00 |
| 100 + | TWD5.00 |
* 參考價格
- RS庫存編號:
- 878-890
- 製造零件編號:
- SQ2309CES-T1_NE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | P-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -1.7A | |
| Maximum Drain Source Voltage Vds | -60V | |
| Series | SQ | |
| Package Type | SOT-23 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.335Ω | |
| Channel Mode | P | |
| Typical Gate Charge Qg @ Vgs | 5.5nC | |
| Maximum Power Dissipation Pd | 2W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.04mm | |
| Width | 2.64mm | |
| Standards/Approvals | RoHS | |
| Height | 1.12mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type P-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -1.7A | ||
Maximum Drain Source Voltage Vds -60V | ||
Series SQ | ||
Package Type SOT-23 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.335Ω | ||
Channel Mode P | ||
Typical Gate Charge Qg @ Vgs 5.5nC | ||
Maximum Power Dissipation Pd 2W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 3.04mm | ||
Width 2.64mm | ||
Standards/Approvals RoHS | ||
Height 1.12mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- GB
The Vishay Automotive P-Channel MOSFET designed for efficient power management in automotive applications. With its robust construction and high reliability, it ensures optimal performance under extreme conditions.
AEC-Q101 qualified for automotive applications
TrenchFET technology maximises efficiency and reduces power loss
Low on-state resistance ensures minimal heat generation
Wide temperature range supports various operational environments
100% R and UIS tested for enhanced reliability
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