Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET, 1.7 A, 60 V Enhancement, 3-Pin SOT-23 SQ2309ES-T1_GE3

RS庫存編號:: 180-7990
製造零件編號:: SQ2309ES-T1_GE3
製造商:: Vishay

Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET, 1.7 A, 60 V Enhancement, 3-Pin SOT-23 SQ2309ES-T1_GE3

可享批量折扣

小計（1 包，共 20 件）*

TWD366.00

(不含稅)

TWD384.40

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 380 個，準備發貨

單位	每單位	每包*
20 - 740	TWD18.30	TWD366.00
760 - 1480	TWD17.80	TWD356.00
1500 +	TWD17.60	TWD352.00

* 參考價格

RS庫存編號:: 180-7990
製造零件編號:: SQ2309ES-T1_GE3
製造商:: Vishay

規格

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產品詳細資訊

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選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P
	Product Type	TrenchFET Power MOSFET
	Maximum Continuous Drain Current Id	1.7A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-236
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.335Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	2W
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	8.5nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101, IEC 61249-2-21, RoHS (2002/95/EC)
	Width	2.64 mm
	Length	3.04mm
	Height	1.12mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Vishay
	Channel Type Type P
	Product Type TrenchFET Power MOSFET
	Maximum Continuous Drain Current Id 1.7A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-236
	Series TrenchFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.335Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 2W
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 8.5nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101, IEC 61249-2-21, RoHS (2002/95/EC)
	Width 2.64 mm
	Length 3.04mm
	Height 1.12mm
	Automotive Standard AEC-Q101

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 15.5mohm at a gate-source voltage of 10V. It has continuous drain current of 50A and maximum power dissipation of 136W. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• Package with low thermal resistance

• TrenchFET power MOSFET

Applications

• Adaptor switch

• Load switches

Certifications

• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested