Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET, 1.7 A, 60 V Enhancement, 3-Pin SOT-23 SQ2309ES-T1_GE3

RS庫存編號:: 180-7990
製造零件編號:: SQ2309ES-T1_GE3
製造商:: Vishay

Vishay TrenchFET Type P-Channel TrenchFET Power MOSFET, 1.7 A, 60 V Enhancement, 3-Pin SOT-23 SQ2309ES-T1_GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 20 件）*

TWD366.00

(不含稅)

TWD384.40

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 380 個，準備發貨

單位	每單位	每包*
20 - 740	TWD18.30	TWD366.00
760 - 1480	TWD17.80	TWD356.00
1500 +	TWD17.60	TWD352.00

* 參考價格

RS庫存編號:: 180-7990
製造零件編號:: SQ2309ES-T1_GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P
	Product Type	TrenchFET Power MOSFET
	Maximum Continuous Drain Current Id	1.7A
	Maximum Drain Source Voltage Vds	60V
	Series	TrenchFET
	Package Type	TO-236
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.335Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	8.5nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	2W
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101, IEC 61249-2-21, RoHS (2002/95/EC)
	Length	3.04mm
	Height	1.12mm
	Width	2.64 mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Vishay
	Channel Type Type P
	Product Type TrenchFET Power MOSFET
	Maximum Continuous Drain Current Id 1.7A
	Maximum Drain Source Voltage Vds 60V
	Series TrenchFET
	Package Type TO-236
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.335Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 8.5nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 2W
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101, IEC 61249-2-21, RoHS (2002/95/EC)
	Length 3.04mm
	Height 1.12mm
	Width 2.64 mm
	Automotive Standard AEC-Q101

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 15.5mohm at a gate-source voltage of 10V. It has continuous drain current of 50A and maximum power dissipation of 136W. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• Package with low thermal resistance

• TrenchFET power MOSFET

Applications

• Adaptor switch

• Load switches

Certifications

• AEC-Q101

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested