Vishay TrenchFET P-Channel MOSFET, -2.5 A, -30 V Enhancement, 3-Pin SOT-23 SQ2303CES-T1_GE3
- RS庫存編號:
- 735-275
- 製造零件編號:
- SQ2303CES-T1_GE3
- 製造商:
- Vishay
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- RS庫存編號:
- 735-275
- 製造零件編號:
- SQ2303CES-T1_GE3
- 製造商:
- Vishay
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | P-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -2.5A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | TrenchFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.37Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.9W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.64mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 3.04mm | |
| Height | 1.12mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type P-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -2.5A | ||
Maximum Drain Source Voltage Vds -30V | ||
Series TrenchFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.37Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.9W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 2.64mm | ||
Standards/Approvals RoHS Compliant | ||
Length 3.04mm | ||
Height 1.12mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- DE
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