Vishay TrenchFET Type N-Channel MOSFET, 2.3 A, 60 V Enhancement, 3-Pin SOT-23 SQ2308CES-T1_GE3

RS庫存編號:: 180-7943
製造零件編號:: SQ2308CES-T1_GE3
製造商:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 2.3 A, 60 V Enhancement, 3-Pin SOT-23 SQ2308CES-T1_GE3

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可享批量折扣

小計（1 包，共 20 件）*

TWD306.00

(不含稅)

TWD321.20

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 26,280 個，準備發貨

單位	每單位	每包*
20 - 740	TWD15.30	TWD306.00
760 - 1480	TWD14.90	TWD298.00
1500 +	TWD14.60	TWD292.00

* 參考價格

RS庫存編號:: 180-7943
製造零件編號:: SQ2308CES-T1_GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

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選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2.3A
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	164mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	3.5nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2W
	Maximum Operating Temperature	175°C
	Height	1.12mm
	Length	3.04mm
	Standards/Approvals	No
	Width	2.64 mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2.3A
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Series TrenchFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 164mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 3.5nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2W
	Maximum Operating Temperature 175°C
	Height 1.12mm
	Length 3.04mm
	Standards/Approvals No
	Width 2.64 mm
	Automotive Standard AEC-Q101

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 20V. It has drain-source resistance of 150mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 2W and continuous drain current of 2.3A. The minimum and a maximum driving voltage for this transistor are 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

• Typical ESD performance 1500V

Applications

• Adaptor switch

• DC/DC converter

• Load switch

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested

• UIS tested