製造零件編號

Vishay SQ Rugged Type P-Channel MOSFET, 2.2 A, 20 V Enhancement, 3-Pin SOT-23 SQ2301ES-T1-GE3

RS庫存編號:: 819-3908
製造零件編號:: SQ2301ES-T1-GE3
製造商:: Vishay

Vishay SQ Rugged Type P-Channel MOSFET, 2.2 A, 20 V Enhancement, 3-Pin SOT-23 SQ2301ES-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 包，共 20 件）*

TWD276.00

(不含稅)

TWD289.80

訂單超過 $1,300.00 免費送貨

暫時缺貨

380 件準備從其他地點送貨

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單位	每單位	每包*
20 +	TWD13.80	TWD276.00

* 參考價格

RS庫存編號:: 819-3908
製造零件編號:: SQ2301ES-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	2.2A
	Maximum Drain Source Voltage Vds	20V
	Series	SQ Rugged
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	180mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	3W
	Typical Gate Charge Qg @ Vgs	5nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	8 V
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	175°C
	Length	3.04mm
	Standards/Approvals	No
	Height	1.02mm
	Width	1.4 mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 2.2A
	Maximum Drain Source Voltage Vds 20V
	Series SQ Rugged
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 180mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 3W
	Typical Gate Charge Qg @ Vgs 5nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 8 V
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 175°C
	Length 3.04mm
	Standards/Approvals No
	Height 1.02mm
	Width 1.4 mm
	Automotive Standard AEC-Q101

COO (Country of Origin):: CN

Vishay SQ Rugged Type P-Channel MOSFET, 2.2 A, 20 V Enhancement, 3-Pin SOT-23 SQ2301ES-T1-GE3

訂單超過 $1,300.00 免費送貨

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor

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