Vishay Half Bridge VS-H N-Channel MOSFET Modules, 195 A, 650 V Enhancement, 12-Pin FlatPAK 5 x 6 VS-HOT200C080
- RS庫存編號:
- 869-230
- 製造零件編號:
- VS-HOT200C080
- 製造商:
- Vishay
N
可享批量折扣
查看批量定價選項小計（1 件）*
TWD1,362.00
(不含稅)
TWD1,430.10
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年2月17日 發貨
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單位 | 每單位 |
|---|---|
| 1 - 4 | TWD1,362.00 |
| 5 + | TWD1,334.00 |
* 參考價格
- RS庫存編號:
- 869-230
- 製造零件編號:
- VS-HOT200C080
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET Modules | |
| Maximum Continuous Drain Current Id | 195A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | VS-H | |
| Package Type | FlatPAK 5 x 6 | |
| Mount Type | Screw | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.91mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Maximum Power Dissipation Pd | 194W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Transistor Configuration | Half Bridge | |
| Maximum Operating Temperature | 175°C | |
| Length | 30mm | |
| Width | 22.8mm | |
| Height | 12.7mm | |
| Standards/Approvals | UL 94 V-0 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N | ||
Product Type MOSFET Modules | ||
Maximum Continuous Drain Current Id 195A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series VS-H | ||
Package Type FlatPAK 5 x 6 | ||
Mount Type Screw | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.91mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Maximum Power Dissipation Pd 194W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Transistor Configuration Half Bridge | ||
Maximum Operating Temperature 175°C | ||
Length 30mm | ||
Width 22.8mm | ||
Height 12.7mm | ||
Standards/Approvals UL 94 V-0 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- KR
The Vishay power module designed for half-bridge applications with Advanced features for current and temperature sensing. This innovative solution provides efficient power management and reliability.
Supports current and temperature sensing for enhanced reliability
Utilises an electrically isolated DBC substrate to minimise EMI
Passes rigorous AQG324 qualification for automotive applications
Operates at a maximum junction temperature of 175 °C, ensuring durability
Delivers low on-resistance values of 0.45 mΩ for improved efficiency
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