Vishay VS-GT200TS065N, Type N-Channel Half Bridge IGBT, 193 A 650 V, 7-Pin INT-A-PAK, Panel
- RS庫存編號:
- 276-6406
- 製造零件編號:
- VS-GT200TS065N
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 盒，共 15 件）*
TWD50,958.00
(不含稅)
TWD53,505.90
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每盒* |
|---|---|---|
| 15 + | TWD3,397.20 | TWD50,958.00 |
* 參考價格
- RS庫存編號:
- 276-6406
- 製造零件編號:
- VS-GT200TS065N
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 193A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 517W | |
| Number of Transistors | 2 | |
| Package Type | INT-A-PAK | |
| Configuration | Half Bridge | |
| Mount Type | Panel | |
| Channel Type | Type N | |
| Pin Count | 7 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 94.4mm | |
| Width | 35.4 mm | |
| Height | 30mm | |
| Standards/Approvals | UL E78996 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 193A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 517W | ||
Number of Transistors 2 | ||
Package Type INT-A-PAK | ||
Configuration Half Bridge | ||
Mount Type Panel | ||
Channel Type Type N | ||
Pin Count 7 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Maximum Operating Temperature 175°C | ||
Length 94.4mm | ||
Width 35.4 mm | ||
Height 30mm | ||
Standards/Approvals UL E78996 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IT
The Vishay IGBT features Gen 4 FRED Pt technology anti parallel diodes with ultra soft reverse recovery characteristics. It is optimized for high current inverter stages (AC TIG welding machines).
UL approved
Very low conduction losses
Low EMI
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