Vishay TrenchFET N-Channel Power MOSFET, 40 A, 80 V N, 8-Pin PowerPAK SIR178DP-T1-UE3
- RS庫存編號:
- 851-503
- 製造零件編號:
- SIR178DP-T1-UE3
- 製造商:
- Vishay
N
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- 從 2027年2月22日 發貨
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- RS庫存編號:
- 851-503
- 製造零件編號:
- SIR178DP-T1-UE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0029Ω | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 69.5nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.04mm | |
| Length | 6.05mm | |
| Width | 5.25mm | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0029Ω | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 69.5nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Height 1.04mm | ||
Length 6.05mm | ||
Width 5.25mm | ||
Standards/Approvals AEC-Q101 Qualified | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- TW
The Vishay N-Channel MOSFET designed to provide efficient power management in various applications. Its Compact PowerPAK SO-8 packaging ensures reliability and performance, making it a versatile choice for modern electronics.
Features TrenchFET Gen IV technology for enhanced efficiency
Offers very low on-resistance to reduce power loss
Designed for operation with low voltage gate drive at 2.5 V
100% tested for R and UIS to ensure quality and reliability
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