Vishay MXP120A N channel-Channel MOSFET, 61 A, 1.2 kV Enhancement, 4-Pin TO-247AD MXP120A250SE-T1GE3
- RS庫存編號:
- 847-941
- 製造零件編號:
- MXP120A250SE-T1GE3
- 製造商:
- Vishay
N
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TWD238.00
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TWD249.90
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暫時缺貨
- 從 2027年5月07日 發貨
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|---|---|
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| 50 - 99 | TWD89.00 |
| 100 + | TWD87.00 |
* 參考價格
- RS庫存編號:
- 847-941
- 製造零件編號:
- MXP120A250SE-T1GE3
- 製造商:
- Vishay
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | TO-247AD | |
| Series | MXP120A | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 109W | |
| Forward Voltage Vf | 4.7V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 23.6mm | |
| Width | 16.13mm | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type TO-247AD | ||
Series MXP120A | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Gate Source Voltage Vgs 22V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 109W | ||
Forward Voltage Vf 4.7V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 23.6mm | ||
Width 16.13mm | ||
Height 5.21mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N-Channel MOSFETs is designed for efficient switching applications, ensuring reliable operation in demanding environments.
Fast switching speed enhances system efficiency
Short circuit withstand time of 2.5 μs increases device reliability
Maximum power dissipation rating of 85 W supports high-performance applications
Drain-source voltage capability of 1200 V provides robust operation
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