Vishay MaxSiC N channel-Channel MOSFET, 31 A, 1200 V N, 4-Pin TO-247AD MXPQ120A080SL-GE3
- RS庫存編號:
- 790-417
- 製造零件編號:
- MXPQ120A080SL-GE3
- 製造商:
- Vishay
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- RS庫存編號:
- 790-417
- 製造零件編號:
- MXPQ120A080SL-GE3
- 製造商:
- Vishay
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247AD | |
| Series | MaxSiC | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 174W | |
| Forward Voltage Vf | 4.7V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Operating Temperature | 175°C | |
| Width | 16.13mm | |
| Length | 23.6mm | |
| Standards/Approvals | RoHS | |
| Height | 5.21mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247AD | ||
Series MaxSiC | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 174W | ||
Forward Voltage Vf 4.7V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Operating Temperature 175°C | ||
Width 16.13mm | ||
Length 23.6mm | ||
Standards/Approvals RoHS | ||
Height 5.21mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay High performance N-Channel SiC MOSFET designed for efficient power switching applications, ensuring optimal performance and reliability in your systems.
Fast switching speed enhances overall system efficiency
Short circuit withstand time of 3 μs provides robust protection
AEC-Q101 qualified for automotive applications ensures reliability
Low on-state resistance minimises power loss during operation
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