Vishay MaxSiC N channel-Channel MOSFET, 32 A, 1200 V N, 7-Pin TO-263-7L MXP120A080SE-T1GE3

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TWD423.00

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TWD444.15

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RS庫存編號:
790-413
製造零件編號:
MXP120A080SE-T1GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

32A

Maximum Drain Source Voltage Vds

1200V

Package Type

TO-263-7L

Series

MaxSiC

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

22V

Forward Voltage Vf

4.7V

Maximum Power Dissipation Pd

185W

Typical Gate Charge Qg @ Vgs

47nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

4.5mm

Length

9.23mm

Width

10.28mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
TW
The Vishay High performance N-Channel MOSFET is designed for efficient energy conversion in demanding applications, featuring Advanced switching capabilities and robust operational characteristics.

Fast switching speed enhances overall system performance

Short circuit withstand time of 3 μs improves reliability

Gate-source voltage of -10 to +22 V allows flexible operation

Continuous drain current of 32 A ensures effective functionality

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