Vishay MaxSiC N channel-Channel MOSFET, 32 A, 1200 V N, 7-Pin TO-263-7L MXP120A080SE-T1GE3
- RS庫存編號:
- 790-413
- 製造零件編號:
- MXP120A080SE-T1GE3
- 製造商:
- Vishay
N
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TWD423.00
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- 從 2027年2月08日 發貨
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| 50 - 99 | TWD203.00 |
| 100 + | TWD137.00 |
* 參考價格
- RS庫存編號:
- 790-413
- 製造零件編號:
- MXP120A080SE-T1GE3
- 製造商:
- Vishay
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 32A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263-7L | |
| Series | MaxSiC | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Forward Voltage Vf | 4.7V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Maximum Power Dissipation Pd | 185W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.23mm | |
| Width | 10.28mm | |
| Standards/Approvals | RoHS | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 32A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263-7L | ||
Series MaxSiC | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Forward Voltage Vf 4.7V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Maximum Power Dissipation Pd 185W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 9.23mm | ||
Width 10.28mm | ||
Standards/Approvals RoHS | ||
Height 4.5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
The Vishay High performance N-Channel MOSFET is designed for efficient energy conversion in demanding applications, featuring Advanced switching capabilities and robust operational characteristics.
Fast switching speed enhances overall system performance
Short circuit withstand time of 3 μs improves reliability
Gate-source voltage of -10 to +22 V allows flexible operation
Continuous drain current of 32 A ensures effective functionality
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