STMicroelectronics N-Channel MOSFET, 125 A, 100 V Enhancement Mode, 8-Pin PowerLeaded STL125N10LF8AG
- RS庫存編號:
- 834-675
- 製造零件編號:
- STL125N10LF8AG
- 製造商:
- STMicroelectronics
N
小計（1 卷，共 3000 件）*
TWD133,500.00
(不含稅)
TWD140,160.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年1月25日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 + | TWD44.50 | TWD133,500.00 |
* 參考價格
- RS庫存編號:
- 834-675
- 製造零件編號:
- STL125N10LF8AG
- 製造商:
- STMicroelectronics
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 125A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerLeaded | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.6mΩ | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Length | 6mm | |
| Standards/Approvals | ROHS | |
| Width | 5mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 125A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerLeaded | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.6mΩ | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Length 6mm | ||
Standards/Approvals ROHS | ||
Width 5mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET utilizes Advanced trench gate technology to optimize power density and efficiency across automotive and industrial power conversion systems.
Automotive grade qualification ensures reliable operation under extreme conditions
State of the ART figure of merit significantly reduces overall switching losses
Very low on state resistance minimizes thermal dissipation during high current conduction
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