STMicroelectronics STH280N10F8-6 N channel-Channel Power MOSFET, 292 A, 100 V Enhancement Mode, 3-Pin H2PAK
- RS庫存編號:
- 800-458
- 製造零件編號:
- STH280N10F8-6
- 製造商:
- STMicroelectronics
N
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD104.00
(不含稅)
TWD109.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 300 件從 2026年5月18日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD104.00 |
| 10 - 24 | TWD101.00 |
| 25 - 99 | TWD99.00 |
| 100 - 499 | TWD84.00 |
| 500 + | TWD79.00 |
* 參考價格
- RS庫存編號:
- 800-458
- 製造零件編號:
- STH280N10F8-6
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 292A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | H2PAK | |
| Series | STH280N10F8-6 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.9mΩ | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 341W | |
| Typical Gate Charge Qg @ Vgs | 177nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 4V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.7mm | |
| Height | 15.8mm | |
| Standards/Approvals | ECOPACK | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 292A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type H2PAK | ||
Series STH280N10F8-6 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.9mΩ | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 341W | ||
Typical Gate Charge Qg @ Vgs 177nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 4V | ||
Maximum Operating Temperature 175°C | ||
Width 4.7mm | ||
Height 15.8mm | ||
Standards/Approvals ECOPACK | ||
Length 10.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.
175 °C maximum operating junction temperature
100% avalanche tested
Excellent FoM (figure of merit)
相關連結
- STMicroelectronics STH280N10F8-2 N channel-Channel Power MOSFET 100 V Enhancement Mode, 3-Pin H2PAK-2
- STMicroelectronics STH285N10F8-6AG N channel-Channel Power MOSFET 100 V Enhancement Mode, 3-Pin H2PAK
- STMicroelectronics STH285N10F8-2AG N channel-Channel Power MOSFET 100 V Enhancement Mode, 3-Pin H2PAK-2
- STMicroelectronics STH285N10F8-6AG N channel-Channel Power MOSFET 1200 V Enhancement Mode, 3-Pin H2PAK-2
- STMicroelectronics SiC MOSFET Type N-Channel MOSFET 1200 V Enhancement, 3-Pin H2PAK-2
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 7-Pin H2PAK
- STMicroelectronics SiC MOSFET Type N-Channel MOSFET 1200 V Enhancement, 3-Pin H2PAK-2 SCT20N120H
- STMicroelectronics STH N channel-Channel Power MOSFET 60 V Enhancement, 6-Pin H2PAK STH345N6F7-6