STMicroelectronics STH280N10F8-2 N channel-Channel Power MOSFET, 292 A, 100 V Enhancement Mode, 3-Pin H2PAK-2

N

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RS庫存編號:
800-457
製造零件編號:
STH280N10F8-2
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

292A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK-2

Series

STH280N10F8-2

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.9mΩ

Channel Mode

Enhancement Mode

Maximum Power Dissipation Pd

341W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

4V

Typical Gate Charge Qg @ Vgs

177nC

Maximum Operating Temperature

175°C

Height

15.8mm

Width

4.7mm

Standards/Approvals

ECOPACK

Length

10.4mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure.

175 °C maximum operating junction temperature

100% avalanche tested

Excellent FoM (figure of merit)

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