Vishay SIR626LDP N channel-Channel MOSFET, 186 A, 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR626LDP-T1-BE3
- RS庫存編號:
- 736-347
- 製造零件編號:
- SIR626LDP-T1-BE3
- 製造商:
- Vishay
N
可享批量折扣
小計（1 組，共 1 件）*
TWD89.00
(不含稅)
TWD93.45
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年6月14日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
膠帶 | 每膠帶 |
|---|---|
| 1 - 9 | TWD89.00 |
| 10 - 24 | TWD58.00 |
| 25 + | TWD30.00 |
* 參考價格
- RS庫存編號:
- 736-347
- 製造零件編號:
- SIR626LDP-T1-BE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 186A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIR626LDP | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0015Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 104W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.15mm | |
| Width | 5.15mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 186A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIR626LDP | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0015Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 104W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.15mm | ||
Width 5.15mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay Power MOSFET delivers exceptional performance for various applications, including synchronous rectification and motor driving, ensuring efficiency in power management solutions.
N-Channel configuration enables high-efficiency switching
Robust ratings support high-temperature environments up to 150 °C
相關連結
- Vishay SIR680LDP N channel-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK SO-8 SIR680LDP-T1-BE3
- Vishay SISS52DN N channel-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS52DN-T1-BE3
- Vishay SISS30DN N channel-Channel MOSFET 80 V Enhancement, 8-Pin PowerPAK 1212-8S SISS30DN-T1-BE3
- Vishay SISS64DN N channel-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK 1212-8S SISS64DN-T1-BE3
- Vishay SISS26DN N channel-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8S SISS26DN-T1-BE3
- Vishay SISS32LDN Type N-Channel Single MOSFETs 80 V Enhancement, 8-Pin PowerPAK SISS32LDN-T1-BE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5402DP-T1-UE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5408DP-T1-UE3