Vishay SIR626LDP N channel-Channel MOSFET, 186 A, 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR626LDP-T1-BE3

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TWD93.45

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RS庫存編號:
736-347
製造零件編號:
SIR626LDP-T1-BE3
製造商:
Vishay
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品牌

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

186A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK SO-8

Series

SIR626LDP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0015Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

104W

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

41nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

5.15mm

Length

6.15mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay Power MOSFET delivers exceptional performance for various applications, including synchronous rectification and motor driving, ensuring efficiency in power management solutions.

N-Channel configuration enables high-efficiency switching

Robust ratings support high-temperature environments up to 150 °C

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