Infineon IMZC120 Type N-Channel MOSFET, 34 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R040M2HXKSA1
- RS庫存編號:
- 351-930
- 製造零件編號:
- IMZC120R040M2HXKSA1
- 製造商:
- Infineon
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TWD513.00
(不含稅)
TWD538.65
(含稅)
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* 參考價格
- RS庫存編號:
- 351-930
- 製造零件編號:
- IMZC120R040M2HXKSA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | IMZC120 | |
| Package Type | PG-TO-247-4-U07 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 218W | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series IMZC120 | ||
Package Type PG-TO-247-4-U07 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 218W | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon CoolSiC MOSFET discrete with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Better energy efficiency
Cooling optimization
Higher power density
New robustness features
Highly reliable
Easy paralleling
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