Infineon IMZC120 N-Channel MOSFET, 27 A, 1.2 kV Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R053M2HXKSA1

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RS庫存編號:
351-931
製造零件編號:
IMZC120R053M2HXKSA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

1.2kV

Series

IMZC120

Package Type

PG-TO-247-4-U07

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

53mΩ

Channel Mode

Enhancement

Forward Voltage Vf

5.5V

Maximum Gate Source Voltage Vgs

-10V, 25V

Typical Gate Charge Qg @ Vgs

30nC

Maximum Power Dissipation Pd

182W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

200°C

Standards/Approvals

JEDEC47/20/22

Length

23.5mm

Width

16mm

Automotive Standard

No

The Infineon CoolSiC MOSFET discrete with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Better energy efficiency

Cooling optimization

Higher power density

New robustness features

Highly reliable

Easy paralleling

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