Infineon IMZC120 Type N-Channel MOSFET, 27 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-U07 IMZC120R053M2HXKSA1

可享批量折扣

小計(1 件)*

TWD432.00

(不含稅)

TWD453.60

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 237 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
1 - 9TWD432.00
10 - 99TWD388.00
100 - 499TWD358.00
500 - 999TWD332.00
1000 +TWD298.00

* 參考價格

RS庫存編號:
351-931
製造零件編號:
IMZC120R053M2HXKSA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

27A

Maximum Drain Source Voltage Vds

1200V

Package Type

PG-TO-247-4-U07

Series

IMZC120

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

53mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-10 to 25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

30nC

Maximum Power Dissipation Pd

182W

Forward Voltage Vf

5.5V

Maximum Operating Temperature

200°C

Length

23.5mm

Standards/Approvals

JEDEC47/20/22

Width

16 mm

Automotive Standard

No

The Infineon CoolSiC MOSFET discrete with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Better energy efficiency

Cooling optimization

Higher power density

New robustness features

Highly reliable

Easy paralleling

相關連結