Infineon IMZA65 Type N-Channel MOSFET, 53 A, 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R033M2HXKSA1
- RS庫存編號:
- 351-871
- 製造零件編號:
- IMZA65R033M2HXKSA1
- 製造商:
- Infineon
可享批量折扣
小計(1 件)*
TWD505.00
(不含稅)
TWD530.25
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 240 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD505.00 |
| 10 - 99 | TWD454.00 |
| 100 + | TWD419.00 |
* 參考價格
- RS庫存編號:
- 351-871
- 製造零件編號:
- IMZA65R033M2HXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 53A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Output Power | 194W | |
| Series | IMZA65 | |
| Package Type | PG-TO247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 21.1 mm | |
| Height | 5.1mm | |
| Length | 15.9mm | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 53A | ||
Maximum Drain Source Voltage Vds 650V | ||
Output Power 194W | ||
Series IMZA65 | ||
Package Type PG-TO247-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 21.1 mm | ||
Height 5.1mm | ||
Length 15.9mm | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon CoolSiC MOSFET 650 V, 33 mΩ G2 in a TO-247-4 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Excellent figures of merit (FOMs)
Best in class RDS(on)
High robustness and overall quality
Flexible driving voltage range
Support for unipolar driving (VGSoff=0)
Best immunity against turn-on effects
Improved package interconnect with .XT
4-pin package
相關連結
- Infineon IMZA65 Type N-Channel MOSFET 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R026M2HXKSA1
- Infineon IMZA65 Type N-Channel MOSFET 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R010M2HXKSA1
- Infineon IMZA65 Type N-Channel MOSFET 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R060M2HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R020M2HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R040M2HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R050M2HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R015M2HXKSA1
- Infineon IKZ50N65EH5XKSA1 IGBT 4-Pin PG-TO247-4
