Infineon OptiMOS Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin PG-TO252-3 IPD60R180CM8XTMA1

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RS庫存編號:
348-988
製造零件編號:
IPD60R180CM8XTMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Package Type

PG-TO252-3

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.18Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

127W

Typical Gate Charge Qg @ Vgs

17nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
MY

Infineon OptiMOS Series MOSFET, 600V Drain Source Voltage, 18A Continuous Drain Current - IPD60R180CM8XTMA1


This MOSFET is a high-voltage N-channel transistor designed for switching and power conversion in surface-mount assemblies. It operates across a wide temperature span and is intended for demanding electronic environments where robust voltage handling and compact mounting are required.

Features and Benefits:


• 600V drain-to-source rating enables high-voltage switching applications
• 18A continuous drain current supports substantial load currents
• 0.18 Ω low on-resistance reduces conduction losses in power circuits
• 127W maximum dissipation allows higher power throughput
• 20V gate threshold supports standard gate-drive voltages
• 17 nC typical gate charge permits fast switching with manageable drive energy

Applications


• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor-drive switching stages
• Used with DC-DC converters in energy management systems
• Can be used for inverter front-ends in renewable installations
• Appropriate for compact surface-mount power modules

What package type is used for efficient PCB mounting?


It is supplied in a TO-252 style surface-mount package with three pins for streamlined board assembly.

How does it cope with extreme ambient conditions?


The device is rated to function from -55 °C up to 150 °C, accommodating elevated junction temperatures in thermally constrained designs.

What gate-drive considerations should be made for switching performance?


Drive circuits should provide up to 20V gate-to-source excursion and account for the 17 nC gate charge when sizing driver current and transition times.

Is this device suitable for automotive-certified systems?


It is not specified to meet automotive standards and should be evaluated against automotive regulatory requirements before use in certified vehicle systems.

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