Infineon OptiMOS Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin PG-TO252-3 IPD60R180CM8XTMA1
- RS庫存編號:
- 348-988
- 製造零件編號:
- IPD60R180CM8XTMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 5 件）*
TWD307.00
(不含稅)
TWD322.35
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 2,500 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD61.40 | TWD307.00 |
| 50 - 95 | TWD58.20 | TWD291.00 |
| 100 - 495 | TWD54.00 | TWD270.00 |
| 500 - 995 | TWD49.60 | TWD248.00 |
| 1000 + | TWD47.80 | TWD239.00 |
* 參考價格
- RS庫存編號:
- 348-988
- 製造零件編號:
- IPD60R180CM8XTMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-TO252-3 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.18Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 127W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-TO252-3 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.18Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 127W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient.
Suitable for hard and soft switching topologies
Ease of use and fast design in through low ringing tendency
Simplified thermal management thanks to our advanced die attach technique
Suitable for a wide variety of applications and power ranges
Increased power density solutions enabled by using products with smaller footprint
相關連結
- Infineon OptiMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO252-3
- Infineon OptiMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO252-3 IPD60R1K0PFD7SAUMA1
- Infineon OptiMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO252-3
- Infineon OptiMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO252-3
- Infineon OptiMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO252-3
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 3-Pin PG-TO252-3
- Infineon OptiMOS Type N-Channel MOSFET 950 V Enhancement, 3-Pin PG-TO252-3
- Infineon OptiMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO252-3 IPD900P06NMATMA1