Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET, 62 A, 120 V Enhancement, 8-Pin PG-TSDSON-8 ISZ106N12LM6ATMA1

此圖片僅供參考，請參閲產品詳細資訊及規格

查看所有MOSFETs
暫時無法供應
抱歉，我們不知道何時會到貨。
RS庫存編號:
285-060
製造零件編號:
ISZ106N12LM6ATMA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

62A

Maximum Drain Source Voltage Vds

120V

Series

OptiMOS 6 Power Transistor

Package Type

PG-TSDSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10.6mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

94W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET is power transistor stands out in high performance applications, designed to cater to the needs of modern electronic systems. Its Advanced N channel technology delivers remarkable efficiency and reliability, making it Ideal for high frequency switching operations. Crafted for professionals in the field, this product combines low on resistance with superior gate charge characteristics. This makes it a suitable choice for synchronous rectification and industrial applications.

Very low on resistance enhances efficiency

Optimised for high frequency switching

High avalanche energy rating for reliability

Excellent gate charge for quick response

Pb free lead plating for compliance

Operates from 55°C to 175°C

MSL 1 classified for manufacturing ease

相關連結