Infineon ISZ Type N-Channel Power Transistor, 128 A, 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ028N03LF2SATMA1
- RS庫存編號:
- 348-902
- 製造零件編號:
- ISZ028N03LF2SATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 10 件）*
TWD408.00
(不含稅)
TWD428.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 4,950 件從 2026年1月19日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 90 | TWD40.80 | TWD408.00 |
| 100 - 240 | TWD38.70 | TWD387.00 |
| 250 - 490 | TWD35.90 | TWD359.00 |
| 500 - 990 | TWD33.00 | TWD330.00 |
| 1000 + | TWD31.80 | TWD318.00 |
* 參考價格
- RS庫存編號:
- 348-902
- 製造零件編號:
- ISZ028N03LF2SATMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 128A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PG-TSDSON-8 | |
| Series | ISZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.8mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 83W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249‑2‑21, JEDEC, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 128A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PG-TSDSON-8 | ||
Series ISZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.8mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 83W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249‑2‑21, JEDEC, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon StrongIRFET 2 power MOSFET 30 V in PQFN 3.3 x 3.3 package. Its features a best-in-class RDS(on) of 2.8 mOhm in a PQFN 3.3 x 3.3 package. This product addresses a broad range of applications from low to high switching frequency. Compared to the previous technology, its achieves up to 40% RDS(on) improvement while having up to 60% FOM enhancement and excellent robustness.
General purpose products
Excellent robustness
Superior price/performance ratio
Broad availability at distributors
Standard packages and pin out
High manufacturing and supply standards
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