Infineon ISZ Type N-Channel Power Transistor, 26 A, 200 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ520N20NM6ATMA1
- RS庫存編號:
- 349-157
- 製造零件編號:
- ISZ520N20NM6ATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 5 件）*
TWD345.00
(不含稅)
TWD362.25
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年4月23日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD69.00 | TWD345.00 |
| 50 - 95 | TWD65.60 | TWD328.00 |
| 100 - 495 | TWD60.80 | TWD304.00 |
| 500 - 995 | TWD56.00 | TWD280.00 |
| 1000 + | TWD53.80 | TWD269.00 |
* 參考價格
- RS庫存編號:
- 349-157
- 製造零件編號:
- ISZ520N20NM6ATMA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | ISZ | |
| Package Type | PG-TSDSON-8FL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 88W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 9.9nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249‑2‑21, JEDEC, J-STD-020, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series ISZ | ||
Package Type PG-TSDSON-8FL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 88W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 9.9nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249‑2‑21, JEDEC, J-STD-020, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 MOSFET is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability. The OptiMOS 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. The new OptiMOS 6 features industry leading RDS(on), improved switching and current sharing capability, enabling high power density, less paralleling, and excellent EMI performance.
Low conduction losses
Low switching losses
Stable operation with improved EMI
Less paralleling required
Better current sharing when paralleling
Environmentally friendly
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