Infineon ISZ Type N-Channel Power Transistor, 54 A, 135 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ143N13NM6ATMA1
- RS庫存編號:
- 349-155
- 製造零件編號:
- ISZ143N13NM6ATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 5 件）*
TWD477.00
(不含稅)
TWD500.85
(含稅)
訂單超過 $1,300.00 免費送貨
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- 4,980 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD95.40 | TWD477.00 |
| 50 - 95 | TWD90.60 | TWD453.00 |
| 100 + | TWD84.00 | TWD420.00 |
* 參考價格
- RS庫存編號:
- 349-155
- 製造零件編號:
- ISZ143N13NM6ATMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 54A | |
| Maximum Drain Source Voltage Vds | 135V | |
| Series | ISZ | |
| Package Type | PG-TSDSON-8FL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 95W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249‑2‑21, JEDEC, J-STD-020, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 54A | ||
Maximum Drain Source Voltage Vds 135V | ||
Series ISZ | ||
Package Type PG-TSDSON-8FL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 95W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249‑2‑21, JEDEC, J-STD-020, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon OptiMOS 6 power MOSFET 135 V Normal Level in PQFN 3.3x3.3 package. OptiMOS 6 135 V targets high power motor drive applications such as LEVs, e-forklifts, power and gardening tools, but also UPS applications which predominantly use 72 to 84 V batteries. This product effectively bridges the gap between the 120 V and 150 V MOSFETs and provides significant improvements in RDS(on) and cost, helping improve the system efficiency.
System cost reduction
Less paralleling required
Reduced VDS overshoot and switching losses
Higher power density designs
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