Infineon OptiMOS Type N-Channel MOSFET, 447 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQDH88N06LM5CGATMA1

RS庫存編號:: 284-944
製造零件編號:: IQDH88N06LM5CGATMA1
製造商:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 447 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQDH88N06LM5CGATMA1

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 5000 件）*

TWD459,500.00

(不含稅)

TWD482,500.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年4月21日發貨

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單位	每單位	每卷*
5000 +	TWD91.90	TWD459,500.00

* 參考價格

RS庫存編號:: 284-944
製造零件編號:: IQDH88N06LM5CGATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	447A
	Maximum Drain Source Voltage Vds	60V
	Package Type	PG-TTFN-9
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	9
	Maximum Drain Source Resistance Rds	0.86mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	333W
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	76nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, IEC61249-2-21
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 447A
	Maximum Drain Source Voltage Vds 60V
	Package Type PG-TTFN-9
	Series OptiMOS
	Mount Type Surface
	Pin Count 9
	Maximum Drain Source Resistance Rds 0.86mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 333W
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 76nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, IEC61249-2-21
	Automotive Standard No

Datasheet - IQDH88N06LM5CGATMA1

The Infineon MOSFET features an OptiMOS 5 Power Transistor is a high performance N channel MOSFET designed to provide exceptional efficiency and reliability for industrial applications. Utilising Advanced semiconductor technology, this component delivers superior thermal management and low on resistance, making it Ideal for power conversion solutions. With its high avalanche energy rating and rigorous validation against JEDEC standards, you can Trust this product to meet stringent operational demands while maintaining safety and durability.

Optimised thermal resistance for cooling

Qualified for industrial reliability

Pb free lead plating for eco friendliness

Low gate drive requirements simplify circuits

Robust design for high drain currents

100% avalanche tested for reliability

Compact package for easy integration

Infineon OptiMOS Type N-Channel MOSFET, 447 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQDH88N06LM5CGATMA1

訂單超過 $1,300.00 免費送貨

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