Infineon OptiMOS Type N-Channel MOSFET, 610 A, 40 V Enhancement, 9-Pin PG-TTFN-9 IQD005N04NM6CGATMA1
- RS庫存編號:
- 284-925
- 製造零件編號:
- IQD005N04NM6CGATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 5000 件）*
TWD450,500.00
(不含稅)
TWD473,000.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年4月21日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 + | TWD90.10 | TWD450,500.00 |
* 參考價格
- RS庫存編號:
- 284-925
- 製造零件編號:
- IQD005N04NM6CGATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 610A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS | |
| Package Type | PG-TTFN-9 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.47mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 333W | |
| Typical Gate Charge Qg @ Vgs | 129nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 610A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS | ||
Package Type PG-TTFN-9 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.47mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 333W | ||
Typical Gate Charge Qg @ Vgs 129nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 6 Power Transistor combines exceptional performance with robust reliability, making it a TOP choice for demanding applications. This N channel MOSFET is designed for industrial environments, providing a maximum drain source voltage of 40V and an impressive continuous drain current rating of up to 610A. This semiconductor device excels in thermal management, making it Ideal for high temperature and high power settings, facilitating a longer lifespan and consistent performance under load. With a commitment to eco friendliness, it is RoHS compliant and halogen free, aligning with modern environmental standards while offering superior engineering quality.
Outstanding thermal resistance for reliability
Robust performance in high stress environments
100% avalanche tested for safety
Exceptional efficiency for power management
Complies with environmental regulations
Minimal switching losses for high frequency operations
Compact design reduces PCB space
Easy integration into industrial systems
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