Infineon OptiMOS Type N-Channel MOSFET, 789 A, 25 V Enhancement, 9-Pin PG-TTFN-9 IQDH29NE2LM5CGATMA1

RS庫存編號:: 284-940
製造零件編號:: IQDH29NE2LM5CGATMA1
製造商:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 789 A, 25 V Enhancement, 9-Pin PG-TTFN-9 IQDH29NE2LM5CGATMA1

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可享批量折扣

小計（1 包，共 2 件）*

TWD254.00

(不含稅)

TWD266.70

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單位	每單位	每包*
2 - 18	TWD127.00	TWD254.00
20 - 198	TWD114.50	TWD229.00
200 - 998	TWD105.50	TWD211.00
1000 - 1998	TWD98.00	TWD196.00
2000 +	TWD87.50	TWD175.00

* 參考價格

RS庫存編號:: 284-940
製造零件編號:: IQDH29NE2LM5CGATMA1
製造商:: Infineon

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	789A
	Maximum Drain Source Voltage Vds	25V
	Package Type	PG-TTFN-9
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	9
	Maximum Drain Source Resistance Rds	0.29mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	278W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS Compliant
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 789A
	Maximum Drain Source Voltage Vds 25V
	Package Type PG-TTFN-9
	Series OptiMOS
	Mount Type Surface
	Pin Count 9
	Maximum Drain Source Resistance Rds 0.29mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 278W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS Compliant
	Automotive Standard No

Datasheet - IQDH29NE2LM5CGATMA1

The Infineon MOSFET features an optimos 5 Power Transistor is engineered to deliver exceptional performance in various industrial applications. This cutting edge N channel transistor operates at a maximum voltage of 25V, offering impressive low on resistance and enhanced thermal management. Its impressive 789A continuous drain current capability allows it to perform efficiently even under rigorous conditions. Built to be reliable, it is fully qualified according to JEDEC standards ensuring longevity and endurance in everyday use.

Advanced thermal resistance for longevity

Zero gate voltage drain current minimizes energy waste

Robust avalanche energy handling for reliability

Pb free and RoHS compliant for eco friendliness

Optimized for logic level applications

Infineon OptiMOS Type N-Channel MOSFET, 789 A, 25 V Enhancement, 9-Pin PG-TTFN-9 IQDH29NE2LM5CGATMA1

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