Infineon OptiMOS Type N-Channel MOSFET, 323 A, 80 V Enhancement, 9-Pin PG-TTFN-9 IQD016N08NM5CGATMA1

RS庫存編號:: 284-931
製造零件編號:: IQD016N08NM5CGATMA1
製造商:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 323 A, 80 V Enhancement, 9-Pin PG-TTFN-9 IQD016N08NM5CGATMA1

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 5000 件）*

TWD487,500.00

(不含稅)

TWD511,900.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年4月21日發貨

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單位	每單位	每卷*
5000 +	TWD97.50	TWD487,500.00

* 參考價格

RS庫存編號:: 284-931
製造零件編號:: IQD016N08NM5CGATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	323A
	Maximum Drain Source Voltage Vds	80V
	Package Type	PG-TTFN-9
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	9
	Maximum Drain Source Resistance Rds	1.57mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	333W
	Typical Gate Charge Qg @ Vgs	106nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	JEDEC, RoHS, IEC61249-2-21
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 323A
	Maximum Drain Source Voltage Vds 80V
	Package Type PG-TTFN-9
	Series OptiMOS
	Mount Type Surface
	Pin Count 9
	Maximum Drain Source Resistance Rds 1.57mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 333W
	Typical Gate Charge Qg @ Vgs 106nC
	Maximum Operating Temperature 175°C
	Standards/Approvals JEDEC, RoHS, IEC61249-2-21
	Automotive Standard No

Datasheet - IQD016N08NM5CGATMA1

The Infineon MOSFET features an OptiMOS 5 Power Transistor is engineered to deliver exceptional performance with its Advanced N channel design. This robust component is ideally suited for applications where high efficiency and low on resistance are paramount. Operating at a breakdown voltage of 80V, it ensures reliable operation in demanding environments. With a superior thermal resistance profile, this power transistor stands up to the rigours of industrial applications, making it a go to solution for engineers looking to enhance energy efficiency in power management systems. Moreover, the extensive validation process guarantees adherence to the highest standards of reliability and safety, ensuring your designs are both performant and resilient.

N channel for efficient power conduction

Low on resistance minimizes power loss

Superior thermal management for longevity

100% avalanche tested for stability

Pb free and RoHS compliant

Halogen free construction for safety

JEDEC qualified for industrial applications

Infineon OptiMOS Type N-Channel MOSFET, 323 A, 80 V Enhancement, 9-Pin PG-TTFN-9 IQD016N08NM5CGATMA1

訂單超過 $1,300.00 免費送貨

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