Infineon OptiMOS Type N-Channel MOSFET, 445 A, 60 V Enhancement, 9-Pin PG-TTFN-9 IQD009N06NM5CGATMA1
- RS庫存編號:
- 284-928
- 製造零件編號:
- IQD009N06NM5CGATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 卷，共 5000 件）*
TWD468,500.00
(不含稅)
TWD491,900.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年4月22日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 + | TWD93.70 | TWD468,500.00 |
* 參考價格
- RS庫存編號:
- 284-928
- 製造零件編號:
- IQD009N06NM5CGATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 445A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | PG-TTFN-9 | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 333W | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 445A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type PG-TTFN-9 | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 333W | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor is engineered for high efficiency performance in various applications, providing stable operation at a maximum voltage of 60V. This N channel MOSFET features a low on resistance, which significantly reduces power losses, ensuring that your designs maintain optimal thermal management even under challenging conditions. With Advanced avalanche characteristics and extensive testing for reliability, this device caters to industrial applications demanding superior thermal resistance and robust performance. The Compact PG TTFN 9 packaging enhances ease of integration into existing designs, making it a go to choice for engineers looking to enhance their systems.
Very low on resistance improves efficiency
Enhanced thermal resistance for performance
Optimised for continuous and pulsed currents
Comprehensive avalanche ratings for durability
RoHS and halogen free compliant
Fully qualified per JEDEC standards
Significant savings on power dissipation
Flexible temperature range for diverse environments
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